模拟和接口芯片

CRTD190P06L2-G

Trench N-MOSFET -60V, 16.3mΩ, -60A

Features Product Summary • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) RDS(on) typ. • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Electrical tools • Lithium battery protection Package Marking and Ordering Information Packing Absolute Maximum Ratings Tsold °C Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature, wave soldering only allowed at leads (1.6mm from case for 10s) -240 Ptot Tj , T stg Gate-Source voltage V Avalanche energy, single pulse (L=0.5mH) EAS VGS W 260 Value -60 16.3mΩ ID (Silicon limit) -60A TC = 100°C (Silicon limit) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Symbol Unit V -60 -60 -39 VDS ID pulse A ID A Parameter Drain-source voltage Continuous drain current TC = 25°C (Silicon limit)a1 TC = 25°C (Package limit)a1 Part # CRTD190P06L2-G Qty 2500pcs Package TO-252 256 ±20 119 Tape Width N/A Reel Size N/A Marking T190P06L2 Reel VDS -60V -55...+150 mJ °C 100% Avalanche Teste

 • Motor control and drive • Electrical tools • Lithium battery protection